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Comparisons of 9% versus 6% transmission attenuated phase shift mask for the 65nm device node

dc.contributor.authorMontgomery, Patrick K.
dc.contributor.authorLitt, Lloyd
dc.contributor.authorConley, Will
dc.contributor.authorLucas, Kevin
dc.contributor.authorvan Wingerden, Johannes
dc.contributor.authorVandenberghe, Geert
dc.contributor.authorWiaux, Vincent
dc.date.accessioned2021-10-15T14:58:44Z
dc.date.available2021-10-15T14:58:44Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9322
dc.sourceIIOimport
dc.titleComparisons of 9% versus 6% transmission attenuated phase shift mask for the 65nm device node
dc.typeJournal article
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.imecauthorWiaux, Vincent
dc.source.peerreviewno
dc.source.beginpage276
dc.source.endpage283
dc.source.journalJournal of Microlithography, Microfabrication and Microsystems
dc.source.issue2
dc.source.volume3
imec.availabilityPublished - imec


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