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Effects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructures

dc.contributor.authorMorschbacher, Mario
dc.contributor.authorda Silva, Douglas
dc.contributor.authorFichtner, Paulo
dc.contributor.authorZawislak, Fernando
dc.contributor.authorHollaender, Bernd
dc.contributor.authorLuysberg, Martina
dc.contributor.authorMantl, Siegfried
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-15T14:59:17Z
dc.date.available2021-10-15T14:59:17Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9324
dc.sourceIIOimport
dc.titleEffects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructures
dc.typeOral presentation
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceMRS Spring meeting Symposium B: High-Mobility Group-IV Materials and Devices
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Fransisco, CA USA
imec.availabilityPublished - imec


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