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Oxygen precipitation and thermal donor formation in Pb and C-doped n-type Czochralski silicon

dc.contributor.authorNeimash, M.V.
dc.contributor.authorKras'ko, M.
dc.contributor.authorKraitchinskii, A.
dc.contributor.authorVoytovych, V.
dc.contributor.authorKabaldin, O.
dc.contributor.authorTsmots, V.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T15:03:57Z
dc.date.available2021-10-15T15:03:57Z
dc.date.issued2004-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9341
dc.sourceIIOimport
dc.titleOxygen precipitation and thermal donor formation in Pb and C-doped n-type Czochralski silicon
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage286
dc.source.endpage293
dc.source.conferenceHigh Purity Silicon VIII
dc.source.conferencedate3/10/2004
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 2004-05


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