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High temperature electron irradiation effects in InGaAs photodiodes

dc.contributor.authorOhyama, H.
dc.contributor.authorTakakura, K.
dc.contributor.authorHayama, K.
dc.contributor.authorHirao, T.
dc.contributor.authorOnoda, S.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T15:08:20Z
dc.date.available2021-10-15T15:08:20Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9357
dc.sourceIIOimport
dc.titleHigh temperature electron irradiation effects in InGaAs photodiodes
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage381
dc.source.endpage386
dc.source.conferenceGettering and Defect Engineering in Semiconductor Technology - GADEST 2003
dc.source.conferencedate21/09/2003
dc.source.conferencelocationBerlin Germany
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena; Vol. 95-96


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