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Impact of band structure on charge trapping in thin SiO2/Al2O3/poly-Si gate stacks

dc.contributor.authorPantisano, Luigi
dc.contributor.authorLucci, L.
dc.contributor.authorCartier, Ed
dc.contributor.authorKerber, Andreas
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorGreen, M.
dc.contributor.authorSelmi, L.
dc.date.accessioned2021-10-15T15:17:07Z
dc.date.available2021-10-15T15:17:07Z
dc.date.issued2004-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9389
dc.sourceIIOimport
dc.titleImpact of band structure on charge trapping in thin SiO2/Al2O3/poly-Si gate stacks
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage320
dc.source.endpage322
dc.source.journalIEEE Electron Device Letters
dc.source.issue5
dc.source.volume25
imec.availabilityPublished - imec


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