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Hot carrier stress and breakdown impact on high-frequency MOSFET analog performance

dc.contributor.authorPantisano, Luigi
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorKaczer, Ben
dc.contributor.authorSimoen, Eddy
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-15T15:17:24Z
dc.date.available2021-10-15T15:17:24Z
dc.date.issued2004-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9390
dc.sourceIIOimport
dc.titleHot carrier stress and breakdown impact on high-frequency MOSFET analog performance
dc.typeProceedings paper
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage224
dc.source.endpage238
dc.source.conferenceDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing. Proceedings of the 1st Int. Symp.
dc.source.conferencedate1/10/2004
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; PV 2004-04


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