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Effect of N2 anneal on thin HfO2 layers studied by C-AFM

dc.contributor.authorPetry, Jasmine
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBlasco, X.
dc.date.accessioned2021-10-15T15:25:19Z
dc.date.available2021-10-15T15:25:19Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9420
dc.sourceIIOimport
dc.titleEffect of N2 anneal on thin HfO2 layers studied by C-AFM
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage174
dc.source.endpage179
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume72
imec.availabilityPublished - open access
imec.internalnotesPaper from the 13th Biennial Conference on Insulating Films on Semiconductors; Barcelona, June 2003


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