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Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes

dc.contributor.authorPoyai, A.
dc.contributor.authorRittaporn, I.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorRooyackers, Rita
dc.date.accessioned2021-10-15T15:36:19Z
dc.date.available2021-10-15T15:36:19Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9462
dc.sourceIIOimport
dc.titleShallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage372
dc.source.endpage375
dc.source.journalMaterials Science and Engineering B
dc.source.volume114-115
imec.availabilityPublished - imec
imec.internalnotesPaper from: E-MRS Spring Meeting Symposium B: Materials Science Issues in Advanced CMOS Source-Drain Engineering; May 2004; Strasbourg


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