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Radiation-induced back-channel leakage in 60 MeV proton irradiation 0.10 μm CMOS partially depleted SOI MOSFETs

dc.contributor.authorRafi, Joan Marc
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMohammadzadeh, A.
dc.date.accessioned2021-10-15T15:43:23Z
dc.date.available2021-10-15T15:43:23Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9488
dc.sourceIIOimport
dc.titleRadiation-induced back-channel leakage in 60 MeV proton irradiation 0.10 μm CMOS partially depleted SOI MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage425
dc.source.endpage432
dc.source.conferenceProceedings 7th European Conference on Radiation and its Effects on Components and Systems
dc.source.conferencedate15/09/2003
dc.source.conferencelocationNoordwijk The Netherlands
imec.availabilityPublished - imec
imec.internalnotesESA SP-536


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