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Breakdown of the quantum Hall effect in InAs/AlSb quantum wells due to counterflowing edge channels
Publication:
Breakdown of the quantum Hall effect in InAs/AlSb quantum wells due to counterflowing edge channels
Date
1995
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
van Wees, B. J.
;
Meijer, G. I.
;
Kuipers, J. J.
;
Klapwijk, T. M.
;
Van de Graaf, Willem
;
Borghs, Gustaaf
Journal
Phys. Rev. B.
Abstract
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2020
since deposited on 2021-09-29
Acq. date: 2025-10-25
Citations
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Views
2020
since deposited on 2021-09-29
Acq. date: 2025-10-25
Citations