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Device characteristics of ultra-shallow junctions formed by fRTP annealing

dc.contributor.authorSatta, Alessandra
dc.contributor.authorLindsay, Richard
dc.contributor.authorSeveri, Simone
dc.contributor.authorHenson, Kirklen
dc.contributor.authorMaex, Karen
dc.contributor.authorMcCoy, S.
dc.contributor.authorGelpey, J.
dc.contributor.authorElliott, K.
dc.date.accessioned2021-10-15T16:01:47Z
dc.date.available2021-10-15T16:01:47Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9552
dc.sourceIIOimport
dc.titleDevice characteristics of ultra-shallow junctions formed by fRTP annealing
dc.typeProceedings paper
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpageC1.3
dc.source.conferenceSilicon Front-End Junction Formation - Physics and Technology
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMaterials Research Society Symposium Proceedings; Vol. 810


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