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Breakdown of the quantum Hall effect in InAs/AlSb quantum wells due to counterflowing edge channels

dc.contributor.authorvan Wees, B. J.
dc.contributor.authorMeijer, G. I.
dc.contributor.authorKuipers, J. J.
dc.contributor.authorKlapwijk, T. M.
dc.contributor.authorVan de Graaf, Willem
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-09-29T13:20:32Z
dc.date.available2021-09-29T13:20:32Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/955
dc.sourceIIOimport
dc.titleBreakdown of the quantum Hall effect in InAs/AlSb quantum wells due to counterflowing edge channels
dc.typeJournal article
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage7973
dc.source.endpage7976
dc.source.journalPhys. Rev. B.
dc.source.volume51
imec.availabilityPublished - imec


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