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Metal induced crystallization of SiGe at 370 °C for monolithically integrated MEMS applications

dc.contributor.authorSedky, Sherif
dc.contributor.authorBaert, Kris
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorWang, Yi
dc.contributor.authorVan der Biest, Omer
dc.contributor.authorWitvrouw, Ann
dc.date.accessioned2021-10-15T16:09:04Z
dc.date.available2021-10-15T16:09:04Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9578
dc.sourceIIOimport
dc.titleMetal induced crystallization of SiGe at 370 °C for monolithically integrated MEMS applications
dc.typeProceedings paper
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.orcidimecVan Hoof, Chris::0000-0002-4645-3326
dc.source.peerreviewno
dc.source.beginpage333
dc.source.endpage338
dc.source.conferenceAmorphous and Nanocrystalline Silicon Science and Technology
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol.808


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