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A deep level study of high-temperature electron-irradiated n-type Cz silicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorNeimash, V.
dc.contributor.authorKraitchinskii, A.
dc.contributor.authorKras'ko, M.
dc.contributor.authorTischenko, V.
dc.contributor.authorVoitovych, V.
dc.date.accessioned2021-10-15T16:15:15Z
dc.date.available2021-10-15T16:15:15Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9599
dc.sourceIIOimport
dc.titleA deep level study of high-temperature electron-irradiated n-type Cz silicon
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage367
dc.source.endpage372
dc.source.conferenceGettering and Defect Engineering in Semiconductor Technology - GADEST 2003
dc.source.conferencedate21/09/2003
dc.source.conferencelocationBerlin Germany
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena; Vol. 95-96


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