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Low-frequency noise study of NMOSFETs with HfO2 gate dielectric

dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorPantisano, Luigi
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T16:17:01Z
dc.date.available2021-10-15T16:17:01Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9605
dc.sourceIIOimport
dc.titleLow-frequency noise study of NMOSFETs with HfO2 gate dielectric
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage319
dc.source.endpage331
dc.source.conferencePhysics and Technology of High-k Gate Dielectrics II
dc.source.conferencedate12/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec
imec.internalnotesElectrochmical Society Proceedings; Vol. PV 2003-22


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