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Low-frequency noise behavior of SiO2-HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness

dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorPantisano, Luigi
dc.contributor.authorClaeys, Cor
dc.contributor.authorYoung, E.
dc.date.accessioned2021-10-15T16:17:18Z
dc.date.available2021-10-15T16:17:18Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9606
dc.sourceIIOimport
dc.titleLow-frequency noise behavior of SiO2-HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage780
dc.source.endpage784
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue5
dc.source.volume51
imec.availabilityPublished - imec


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