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Grain size and orientation in ternary Co1-xNixSi2 thin films on Si(100): influence of the Ni content

dc.contributor.authorSmeets, D.
dc.contributor.authorVantomme, Andre
dc.contributor.authorDrijbooms, Chris
dc.contributor.authorBender, Hugo
dc.date.accessioned2021-10-15T16:19:03Z
dc.date.available2021-10-15T16:19:03Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9612
dc.sourceIIOimport
dc.titleGrain size and orientation in ternary Co1-xNixSi2 thin films on Si(100): influence of the Ni content
dc.typeOral presentation
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDrijbooms, Chris
dc.contributor.imecauthorBender, Hugo
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium B: Materials Science Issues in Advanced CMOS Source-Drain Engineering
dc.source.conferencedate24/05/2004
dc.source.conferencelocationStrassbourg France
imec.availabilityPublished - imec


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