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Low-frequency noise and transport mechanisms in AlGaN/GaN HEMT devices

dc.contributor.authorTartarin, J.G.
dc.contributor.authorSoubercaze-Pun, G.
dc.contributor.authorRennane, A.
dc.contributor.authorBary, L.
dc.contributor.authorPlana, R.
dc.contributor.authorde Jaeger, J.-C.
dc.contributor.authorGermain, Marianne
dc.contributor.authorDelage, S.L.
dc.contributor.authorGraffeuil, J.
dc.date.accessioned2021-10-15T16:35:12Z
dc.date.available2021-10-15T16:35:12Z
dc.date.issued2004-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9666
dc.sourceIIOimport
dc.titleLow-frequency noise and transport mechanisms in AlGaN/GaN HEMT devices
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage87
dc.source.endpage97
dc.source.conferenceProceedings of Workshop WS GAAS02: Wide Bandgap Research for Microwave Applications: materials, device and circuit issues
dc.source.conferencedate13/10/2004
dc.source.conferencelocationAmsterdam The Netherlands
imec.availabilityPublished - imec


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