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On the recombination activity of oxygen precipitation related lattice defects in silicon

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKaniava, Arvydas
dc.contributor.authorLibezny, Milan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorKissinger, G.
dc.contributor.authorGaubas, E.
dc.contributor.authorClaeys, C.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-09-29T13:22:00Z
dc.date.available2021-09-29T13:22:00Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/972
dc.sourceIIOimport
dc.titleOn the recombination activity of oxygen precipitation related lattice defects in silicon
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage35
dc.source.endpage40
dc.source.conferenceDefect- and Impurity-Engineered Semiconductors and Devices
dc.source.conferencedate17/04/1995
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 378


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