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Composition and growth kinetics of the interfacial layer for MOCVD HfO2 layers on Si substrates

dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorConard, Thierry
dc.contributor.authorPetry, Jasmine
dc.contributor.authorDate, Lucien
dc.contributor.authorPique, Didier
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T16:59:51Z
dc.date.available2021-10-15T16:59:51Z
dc.date.issued2004-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9744
dc.sourceIIOimport
dc.titleComposition and growth kinetics of the interfacial layer for MOCVD HfO2 layers on Si substrates
dc.typeJournal article
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDate, Lucien
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.beginpageF77
dc.source.endpageF80
dc.source.journalJ. Electrochemical Society
dc.source.issue4
dc.source.volume151
imec.availabilityPublished - imec


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