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Composition and growth kinetics of the interfacial layer for MOCVD HfO2 layers on Si substrates
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Composition and growth kinetics of the interfacial layer for MOCVD HfO2 layers on Si substrates
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Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Van Elshocht, Sven
;
Caymax, Matty
;
De Gendt, Stefan
;
Conard, Thierry
;
Petry, Jasmine
;
Date, Lucien
;
Pique, Didier
;
Heyns, Marc
Journal
J. Electrochemical Society
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1965
since deposited on 2021-10-15
Acq. date: 2026-07-14
Citations
Statistics
Views
1965
since deposited on 2021-10-15
Acq. date: 2026-07-14
Citations