Publication:

Composition and growth kinetics of the interfacial layer for MOCVD HfO2 layers on Si substrates

Date

2004-03
Journal article
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dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorConard, Thierry
dc.contributor.authorPetry, Jasmine
dc.contributor.authorDate, Lucien
dc.contributor.authorPique, Didier
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDate, Lucien
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.accessioned2021-10-15T16:59:51Z
dc.date.available2021-10-15T16:59:51Z
dc.date.issued2004-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9744
dc.source.beginpageF77
dc.source.endpageF80
dc.source.issue4
dc.source.journalJ. Electrochemical Society
dc.source.volume151
dc.title

Composition and growth kinetics of the interfacial layer for MOCVD HfO2 layers on Si substrates

dc.typeJournal article
dspace.entity.typePublication
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