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dc.contributor.authorDe Bisschop, Peter
dc.contributor.authorHuyskens, Dominique
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-09-29T12:40:22Z
dc.date.available2021-09-29T12:40:22Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/97
dc.sourceIIOimport
dc.titleResonant laser-induced post-ionisation SIMS for application to semiconductor problems
dc.typeProceedings paper
dc.contributor.imecauthorDe Bisschop, Peter
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage335
dc.source.endpage338
dc.source.conferenceSecondary Ion Mass Spectrometry - SIMS IX. Proceedings of the 9th International Conference
dc.source.conferencedate7/11/1993
dc.source.conferencelocationYokohama Japan
imec.availabilityPublished - open access


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