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dc.contributor.authorVassilev, Vesselin
dc.contributor.authorLorenzini, Martino
dc.contributor.authorJansen, Philippe
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorThijs, Steven
dc.contributor.authorMahadeva Iyer, Natarajan
dc.contributor.authorSteyaert, M.
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-15T17:30:26Z
dc.date.available2021-10-15T17:30:26Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9842
dc.sourceIIOimport
dc.titleAdvanced modeling and parameter extraction of the MOSFET ESD breakdown triggering in the 90nm CMOS node technologies
dc.typeProceedings paper
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorThijs, Steven
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.source.peerreviewno
dc.source.beginpage2.B.1
dc.source.conferenceElectrical Overstress / Electrostatic Discharge Symposium Proceedings
dc.source.conferencedate19/09/2004
dc.source.conferencelocationDallas, TX USA
imec.availabilityPublished - imec
imec.internalnotesCD-ROM proceedings


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