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Articles
MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
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MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
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Date
2004-06
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vellianitis, G.
;
Apostolopoulos, G.
;
Mavrou, G.
;
Argyropoulos, K.
;
dimoulas, A.
;
Hooker, Jacob
;
Conard, Thierry
;
Butcher, M.
Journal
Materials Science & Engineering B (Solid-State Materials for Advanced
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1918
since deposited on 2021-10-15
1
last month
1
last week
Acq. date: 2026-01-07
Citations