MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement

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Authors

Vellianitis, G.; Apostolopoulos, G.; Mavrou, G.; Argyropoulos, K.; dimoulas, A.; Hooker, Jacob; Conard, Thierry; Butcher, M.

Issue

1_3

Journal

Materials Science & Engineering B (Solid-State Materials for Advanced

Volume

B109

Title

MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement

Publication type

Journal article

Embargo date

9999-12-31

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