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MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement

dc.contributor.authorVellianitis, G.
dc.contributor.authorApostolopoulos, G.
dc.contributor.authorMavrou, G.
dc.contributor.authorArgyropoulos, K.
dc.contributor.authordimoulas, A.
dc.contributor.authorHooker, Jacob
dc.contributor.authorConard, Thierry
dc.contributor.authorButcher, M.
dc.date.accessioned2021-10-15T17:31:46Z
dc.date.available2021-10-15T17:31:46Z
dc.date.issued2004-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9846
dc.sourceIIOimport
dc.titleMBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
dc.typeJournal article
dc.contributor.imecauthorConard, Thierry
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage85
dc.source.endpage88
dc.source.journalMaterials Science & Engineering B (Solid-State Materials for Advanced
dc.source.issue1_3
dc.source.volumeB109
imec.availabilityPublished - open access
imec.internalnotesERMS 2003 Symposium I: Functional Metal Oxides - Semiconductor Structures; Strasbourg


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