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Interfacial chemistry at high-k oxide layers on pretreated silicon wafers: XPS and TOF-SIMS study

dc.contributor.authorVitchev, R.
dc.contributor.authorConard, Thierry
dc.contributor.authorBender, Hugo
dc.contributor.authorHoussiau, L.
dc.contributor.authorPireaux, J.J.
dc.date.accessioned2021-10-15T17:42:55Z
dc.date.available2021-10-15T17:42:55Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9881
dc.sourceIIOimport
dc.titleInterfacial chemistry at high-k oxide layers on pretreated silicon wafers: XPS and TOF-SIMS study
dc.typeOral presentation
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.conference31st Conference on the Physics and Chemistry of Semiconductor Interfaces
dc.source.conferencedate18/01/2004
dc.source.conferencelocationKailua-Kona, HI USA
imec.availabilityPublished - imec


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