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X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface

dc.contributor.authorVitchev, R.G.
dc.contributor.authorPireaux, J.J.
dc.contributor.authorConard, Thierry
dc.contributor.authorBender, Hugo
dc.contributor.authorWolstenholme, J.
dc.contributor.authorDefranoux, C.
dc.date.accessioned2021-10-15T17:43:16Z
dc.date.available2021-10-15T17:43:16Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9882
dc.sourceIIOimport
dc.titleX-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface
dc.typeJournal article
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.beginpage21
dc.source.endpage25
dc.source.journalApplied Surface Science
dc.source.issue1_2
dc.source.volume235
imec.availabilityPublished - imec
imec.internalnotesEuropean Vacuum Congress 2003


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