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Impact of different level copper interconnection on hot carrier lifetime of 0.18μm CMOS process

dc.contributor.authorWan, Xinggong
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorHan, Yongzhao
dc.date.accessioned2021-10-15T17:48:12Z
dc.date.available2021-10-15T17:48:12Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9897
dc.sourceIIOimport
dc.titleImpact of different level copper interconnection on hot carrier lifetime of 0.18μm CMOS process
dc.typeProceedings paper
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage383
dc.source.endpage385
dc.source.conferenceProceedings of the 3rd International Conference on Semiconductor Technology - ISTC
dc.source.conferencedate15/09/2004
dc.source.conferencelocationShanghai China
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 2004-11


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