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Damage accumulation and dopant migration during shallow As and Sb implantation into Si

dc.contributor.authorWerner, M.
dc.contributor.authorvan den Berg, J.A.
dc.contributor.authorArmour, D.G.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCollart, E.H.J.
dc.contributor.authorGoldberg, R.D.
dc.contributor.authorBailey, P.
dc.contributor.authorNoakes, T.C.Q.
dc.date.accessioned2021-10-15T17:52:35Z
dc.date.available2021-10-15T17:52:35Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9910
dc.sourceIIOimport
dc.titleDamage accumulation and dopant migration during shallow As and Sb implantation into Si
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage67
dc.source.endpage74
dc.source.journalNuclear Instruments & Methods in Physics Research B
dc.source.volume216
imec.availabilityPublished - imec
imec.internalnotesPaper from E-MRS 2003 Symposium E


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