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dc.contributor.authorWillemen, J.
dc.contributor.authorAndreini, A.
dc.contributor.authorDe Heyn, Vincent
dc.contributor.authorEsmark, K.
dc.contributor.authorEtherton, M.
dc.contributor.authorGieser, H.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMettler, S.
dc.contributor.authorMorena, E.
dc.contributor.authorQu, N.
dc.contributor.authorSoppa, W.
dc.contributor.authorStadler, W.
dc.contributor.authorStella, R.
dc.contributor.authorWilkening, W.
dc.contributor.authorWolf, H.
dc.contributor.authorZullino, L.
dc.date.accessioned2021-10-15T17:56:20Z
dc.date.available2021-10-15T17:56:20Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9921
dc.sourceIIOimport
dc.titleCharacterization and modeling of transient device behavior under CMD ESD stress
dc.typeJournal article
dc.contributor.imecauthorDe Heyn, Vincent
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage133
dc.source.endpage153
dc.source.journalJournal of Electrostatics
dc.source.issue2_3
dc.source.volume62
imec.availabilityPublished - imec
imec.internalnotesPaper from 2003 EOS/ESD Symposium


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