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A study of relaxation current in high-k gate stacks

dc.contributor.authorXu, Zhen
dc.contributor.authorPantisano, Luigi
dc.contributor.authorKerber, Andreas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCartier, Eduard
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-15T18:05:20Z
dc.date.available2021-10-15T18:05:20Z
dc.date.issued2004-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9948
dc.sourceIIOimport
dc.titleA study of relaxation current in high-k gate stacks
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage402
dc.source.endpage408
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue3
dc.source.volume51
imec.availabilityPublished - imec


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