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Growth of wide bandgap materials for spin injection from spin polarised Heuslers into narrow gap semiconductors

dc.contributor.authorZhang, T.
dc.contributor.authorClowes, S. K.
dc.contributor.authorBranford, W. R.
dc.contributor.authorBugoslavsky, Y.
dc.contributor.authorCohen, L. F.
dc.contributor.authorVan Roy, Wim
dc.date.accessioned2021-10-15T18:13:30Z
dc.date.available2021-10-15T18:13:30Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9972
dc.sourceIIOimport
dc.titleGrowth of wide bandgap materials for spin injection from spin polarised Heuslers into narrow gap semiconductors
dc.typeOral presentation
dc.contributor.imecauthorVan Roy, Wim
dc.contributor.orcidimecVan Roy, Wim::0000-0003-3232-1987
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting Symposium G: Semiconductor Spintronics
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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