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HfO2 by ALD and MOCVD on Ge

dc.contributor.authorZhao, Chao
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDelabie, Annelies
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-15T18:16:26Z
dc.date.available2021-10-15T18:16:26Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9980
dc.sourceIIOimport
dc.titleHfO2 by ALD and MOCVD on Ge
dc.typeOral presentation
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewno
dc.source.conference1st International NanoElectronics Materials Conference - NEMatC
dc.source.conferencedate2/03/2004
dc.source.conferencelocationGrenoble France
imec.availabilityPublished - imec


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