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Formation of ternary Ni-silicide on relaxed and strained SiGe layers

dc.contributor.authorZhao, Q.T.
dc.contributor.authorBuca, D.
dc.contributor.authorLenk, S.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMantl, S.
dc.date.accessioned2021-10-15T18:16:46Z
dc.date.available2021-10-15T18:16:46Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9981
dc.sourceIIOimport
dc.titleFormation of ternary Ni-silicide on relaxed and strained SiGe layers
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage285
dc.source.endpage289
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume76
imec.availabilityPublished - imec
imec.internalnotesPaper from MAM 2004


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