Show simple item record

Dual work function metal gate CMOS by means of full silicidation (FUSI)

dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.authorKittl, Jorge
dc.contributor.authorLauwers, Anne
dc.date.accessioned2021-10-16T00:42:22Z
dc.date.available2021-10-16T00:42:22Z
dc.date.issued2005-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9996
dc.sourceIIOimport
dc.titleDual work function metal gate CMOS by means of full silicidation (FUSI)
dc.typeJournal article
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorLauwers, Anne
dc.source.peerreviewno
dc.source.beginpage111
dc.source.endpage113
dc.source.journalFabtech Magazine
dc.source.issueQ4
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record