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Articles
Dual work function metal gate CMOS by means of full silicidation (FUSI)
Publication:
Dual work function metal gate CMOS by means of full silicidation (FUSI)
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Date
2005
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Absil, Philippe
;
Biesemans, Serge
;
Kittl, Jorge
;
Lauwers, Anne
Journal
Fabtech Magazine
Abstract
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1831
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Acq. date: 2026-08-10
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Statistics
Views
1831
since deposited on 2021-10-16
2
last month
Acq. date: 2026-08-10
Citations