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Dual work function metal gate CMOS by means of full silicidation (FUSI)

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dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.authorKittl, Jorge
dc.contributor.authorLauwers, Anne
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorLauwers, Anne
dc.date.accessioned2021-10-16T00:42:22Z
dc.date.available2021-10-16T00:42:22Z
dc.date.issued2005-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9996
dc.source.beginpage111
dc.source.endpage113
dc.source.issueQ4
dc.source.journalFabtech Magazine
dc.title

Dual work function metal gate CMOS by means of full silicidation (FUSI)

dc.typeJournal article
dspace.entity.typePublication
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