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Browsing by Author "Aichinger, T."

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    Analytic modeling of the bias temperature instability using capture/emission time maps

    Grasser, Tibor
    ;
    Wagner, Paul-Jurgen
    ;
    Reisinger, Hans
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    Aichinger, T.
    ;
    Pobegen, G.
    ;
    Nelhiebel, M.
    Proceedings paper
    2011-12, IEEE International Electron Devices Meeting - IEDM, 4/12/2011, p.618-621
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    Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and high-k gate stacks

    Grasser, T.
    ;
    Kaczer, Ben  
    ;
    Aichinger, T.
    ;
    Goes, W.
    ;
    Nelhiebel, M.
    Proceedings paper
    2008, IEEE Integrated Reliability Workshop - IRW, 12/10/2008, p.91-95
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    Understanding negative bias temperature instability in the context of hole trapping

    Grasser, T.
    ;
    Kaczer, Ben  
    ;
    Goes, W.
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    Aichinger, T.
    ;
    Hehenberger, P.
    ;
    Nelhiebel, M.
    Journal article
    2009, Microelectronic Engineering, (86) 7_9, p.1876-1882

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