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Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and high-k gate stacks
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Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and high-k gate stacks
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Date
2008
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Grasser, T.
;
Kaczer, Ben
;
Aichinger, T.
;
Goes, W.
;
Nelhiebel, M.
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1950
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Acq. date: 2025-12-10
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Metrics
Views
1950
since deposited on 2021-10-17
2
last month
Acq. date: 2025-12-10
Citations