Browsing by Author "Al-Kofahi, I. S."
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Publication Behavior of hot hole stressed SiO2/Si interface at elevated temperatures
Journal article1998, Journal of Applied Physics, (83) 2, p.843-850Publication Continuing degradation of the SiO2/Si interface after hot hole stress
Journal article1997, Journal of Applied Physics, (81) 6, p.2686-2692Publication Generation and annealing of hot hole induced interface states
Journal article1997, Microelectronic Engineering, 36, p.227-230Publication On the hot-hole induced post-stress interface trap generation in MOSFETs
Proceedings paper1996, 1996 International Reliability Physics Proceedings ; April 29 - May 2, 1996. Dallas, Texas, USA., p.305-310Publication The enhanced degradation of MOSFETs damaged by hot holes
Proceedings paper1996, Proceedings of the Third International Symposium on the Physics and Chemistry of SiO2 and the SiO2 Interface; May 5-10, 1996. Lo, p.711-721