Browsing by Author "An, Junyang"
Now showing 1 - 1 of 1
- Results Per Page
- Sort Options
Publication Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si films grown by PECVD (200 degrees C) and APCVD (1130 degrees C)
Journal article2021, APPLIED SURFACE SCIENCE, 546, p.149056