Publication:
Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si films grown by PECVD (200 degrees C) and APCVD (1130 degrees C)
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940 since deposited on 2022-02-24
56last month
15last week
Acq. date: 2026-05-05
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1895 since deposited on 2022-02-24
Acq. date: 2026-05-05
Citations