Publication:
Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si films grown by PECVD (200 degrees C) and APCVD (1130 degrees C)
Loading...
Journal
Abstract
Description
Statistics
Downloads
792 since deposited on 2022-02-24
88last month
18last week
Acq. date: 2026-02-24
Views
1894 since deposited on 2022-02-24
1last month
Acq. date: 2026-02-24
Citations
Statistics
Downloads
792 since deposited on 2022-02-24
88last month
18last week
Acq. date: 2026-02-24
Views
1894 since deposited on 2022-02-24
1last month
Acq. date: 2026-02-24
Citations