Publication:
Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si films grown by PECVD (200 degrees C) and APCVD (1130 degrees C)
Loading...
Journal
Abstract
Description
Statistics
Downloads
717 since deposited on 2022-02-24
130last month
27last week
Acq. date: 2026-01-26
Views
1893 since deposited on 2022-02-24
Acq. date: 2026-01-26
Citations
Statistics
Downloads
717 since deposited on 2022-02-24
130last month
27last week
Acq. date: 2026-01-26
Views
1893 since deposited on 2022-02-24
Acq. date: 2026-01-26
Citations