Publication:
Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si films grown by PECVD (200 degrees C) and APCVD (1130 degrees C)
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Acq. date: 2025-12-08
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524 since deposited on 2022-02-24
82last month
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Acq. date: 2025-12-08
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1893 since deposited on 2022-02-24
Acq. date: 2025-12-08
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