Publication:

Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si films grown by PECVD (200 degrees C) and APCVD (1130 degrees C)

Date

2021
Journal article
https://doi.org/10.1016/j.apsusc.2021.149056
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-2045-9698
cris.virtualsource.departmentaabd45a4-0a09-4ac9-8496-0b84e454dce3
cris.virtualsource.orcidaabd45a4-0a09-4ac9-8496-0b84e454dce3
dc.contributor.authorAn, Junyang
dc.contributor.authorMaurice, Jean-Luc
dc.contributor.authorRoca i Cabarrocas, Pere
dc.contributor.authorChen, Wanghua
dc.contributor.authorDepauw, Valerie
dc.contributor.imecauthorDepauw, Valerie
dc.contributor.orcidextMaurice, Jean-Luc::0000-0002-5005-7174
dc.contributor.orcidimecDepauw, Valerie::0000-0003-2045-9698
dc.date.accessioned2022-02-24T12:57:11Z
dc.date.available2022-02-24T12:57:11Z
dc.date.issued2021
dc.identifier.doi10.1016/j.apsusc.2021.149056
dc.identifier.issn0169-4332
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39113
dc.publisherELSEVIER
dc.source.beginpage149056
dc.source.issuena
dc.source.journalAPPLIED SURFACE SCIENCE
dc.source.numberofpages8
dc.source.volume546
dc.subject.keywordsBUFFER LAYER
dc.subject.keywordsSMART-CUT
dc.subject.keywordsIII-V
dc.subject.keywordsSILICON
dc.subject.keywordsPLASMA
dc.subject.keywordsDEPOSITION
dc.subject.keywordsTHICKNESS
dc.subject.keywordsGAAS
dc.title

Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si films grown by PECVD (200 degrees C) and APCVD (1130 degrees C)

dc.typeJournal article
dspace.entity.typePublication
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