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Browsing by Author "Andrieu, F."

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    In-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETs

    Andrieu, F.
    ;
    Ernst, T.
    ;
    Ravit, Claire
    ;
    Jurczak, Gosia  
    ;
    Gibaudo, G.
    ;
    Deleonibus, S.
    Journal article
    2005, IEEE Electron Device Letters, (26) 10, p.755-757

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