Browsing by Author "Aseev, A."

Now showing 1 - 6 of 6

Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in a HREM

Fedina, L.
;
Gutakovskii, A.
;
Aseev, A.
;
Van Landuyt, J.
;
Vanhellemont, Jan
Journal article
1999, Physica Status Solidi A, (171) 1, p.147-157
In-situ studies of point defect reactions in silicon by high flux electron iIrradiation in a high voltage transmission electron microscope

Fedina, L.
;
Van Landuyt, J.
;
Vanhellemont, Jan
;
Romano, Albert
;
Aseev, A.
Proceedings paper
1994, Joint Meeting of the Belgian and Dutch Societies for Electron Microscopy, 1/12/1994, p.83-85
New intermediate defect configuration in Si studie by in situ HREM irradiation

Fedina, L.
;
Gutakovskii, A.
;
Aseev, A.
;
Van Landuyt, J.
;
Vanhellemont, Jan
Proceedings paper
1997, Microscopy of Semiconducting Materials 1997, 7/04/1997, p.43-6
Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope

Fedina, L.
;
Van Landuyt, J.
;
Vanhellemont, Jan
;
Aseev, A.
Proceedings paper
1995, In Situ Electron and Tunneling Microscopy of Dynamic Processes; 27-30 Nov. 1995; Boston, MA, USA., p.189-94
Point defect reactions in silicon studied by in-situ high flux electron irradiation in a high voltage transmission electron microscope

Vanhellemont, Jan
;
Romano, Albert
;
Fedina, L.
;
Van Landuyt, J.
;
Aseev, A.
Oral presentation
1994, 1st International Conference on Materials for Microelectronics
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope

Vanhellemont, Jan
;
Romano, Albert
;
Fedina, L.
;
Van Landuyt, J.
;
Aseev, A.
Journal article
1995, Materials Science and Technology, (11) 11, p.1194-1202