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Browsing by Author "Avasarala, Naga Sruti"

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    Atomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich GexSe1-x materials for selector applications

    Clima, Sergiu  
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    Govoreanu, Bogdan  
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    Opsomer, Karl  
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    Velea, Alin
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    Avasarala, Naga Sruti
    Proceedings paper
    2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.79-82
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    Doped GeSe materials for selector applications

    Avasarala, Naga Sruti
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    Govoreanu, Bogdan  
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    Opsomer, Karl  
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    Devulder, Wouter  
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    Clima, Sergiu  
    Proceedings paper
    2017, 47th European Solid-State Device Research Conference - ESSDERC, 10/09/2017, p.168-171
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    Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers

    Avasarala, Naga Sruti
    ;
    Donadio, Gabriele Luca  
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    Witters, Thomas  
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    Opsomer, Karl  
    Proceedings paper
    2018, IEEE Symposium on VLSI Technology, 18/06/2018, p.209-210
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    Ovonic threshold switching GexSey chalcogenide materials: stoichiometry, trap nature and material relaxation from first principles

    Clima, Sergiu  
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    Garbin, Daniele  
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    Opsomer, Karl  
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    Avasarala, Naga Sruti
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    Devulder, Wouter  
    Journal article
    2020, Physica Status Solidi. Rapid Research Letters, (14) 5, p.1900672
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    Switching behavior of HfO2-based resistive RAM with vertical CNT bottom electrode

    Avasarala, Naga Sruti
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    Wouters, Dirk
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    Jurczak, Malgorzata
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    Van Houdt, Jan  
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    Heyns, Marc  
    Proceedings paper
    2017, International Memory Workshop - IMW, 15/05/2017, p.1-4
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    Thermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance

    Govoreanu, Bogdan  
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    Donadio, Gabriele Luca  
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    Opsomer, Karl  
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    Devulder, Wouter  
    ;
    Afanasiev, Valeri  
    Proceedings paper
    2017, Symposium on VLSI Technology, 5/06/2017, p.92-93

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