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Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers
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Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers
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Date
2018
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Avasarala, Naga Sruti
;
Donadio, Gabriele Luca
;
Witters, Thomas
;
Opsomer, Karl
;
Govoreanu, Bogdan
;
Fantini, Andrea
;
Clima, Sergiu
;
Oh, Hyungrock
;
Kundu, Shreya
;
Devulder, Wouter
;
van der Veen, Marleen
;
Van Houdt, Jan
;
Heyns, Marc
;
Goux, Ludovic
;
Kar, Gouri Sankar
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2035
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Acq. date: 2025-12-11
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Views
2035
since deposited on 2021-10-25
2
last month
1
last week
Acq. date: 2025-12-11
Citations