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Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers

Date

2018
Proceedings Paper
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dc.contributor.authorAvasarala, Naga Sruti
dc.contributor.authorDonadio, Gabriele Luca
dc.contributor.authorWitters, Thomas
dc.contributor.authorOpsomer, Karl
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorFantini, Andrea
dc.contributor.authorClima, Sergiu
dc.contributor.authorOh, Hyungrock
dc.contributor.authorKundu, Shreya
dc.contributor.authorDevulder, Wouter
dc.contributor.authorvan der Veen, Marleen
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorHeyns, Marc
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorDonadio, Gabriele Luca
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorOh, Hyungrock
dc.contributor.imecauthorKundu, Shreya
dc.contributor.imecauthorDevulder, Wouter
dc.contributor.imecauthorvan der Veen, Marleen
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecOh, Hyungrock::0000-0001-5244-5755
dc.contributor.orcidimecDevulder, Wouter::0000-0002-5156-0177
dc.contributor.orcidimecvan der Veen, Marleen::0000-0002-9402-8922
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-25T16:35:48Z
dc.date.available2021-10-25T16:35:48Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30163
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8510680
dc.source.beginpage209
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate18/06/2018
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage210
dc.title

Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers

dc.typeProceedings paper
dspace.entity.typePublication
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