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Browsing by Author "Bühler, R.T."

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    Biaxial + uniaxial stress effectiveness in tri-gate SOI nMOSFETs with vaiable fin dimensions

    Bühler, R.T.
    ;
    Agopian, P.G.D.
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Martino, J.A.
    Proceedings paper
    2012, IEEE International SOI Conference, 1/10/2012, p.4.11
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    Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs

    Bühler, R.T.
    ;
    Agopian, P.G.D.
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Martino, J.A.
    Proceedings paper
    2012, Proceedings of the 27th Symposium on Microelectronics Technology and Devices - SBMicro, 30/08/2012, p.145-152
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    Fin shape influence on the analog performance of standard and trained MuGFETs

    Bühler, R.T.
    ;
    Martino, J.A.
    ;
    Agopian, P.G.D.
    ;
    Giacomini, R.
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    Proceedings paper
    2010, SOI Conference, 11/10/2010
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    SEG and fin dimensions influence on biaxial stress effectiveness in tri-gate SOI nMOSFETs

    Bühler, R.T.
    ;
    Agopian, P.G.D.
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Martino, J.A.
    Proceedings paper
    2012, 8th European Workshop on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI, 24/01/2012, p.121-122

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